New Physical Deposition Approach for Low Cost Inorganic Hole Transport Layer in Normal Architecture of Durable Perovskite Solar Cells

• Published in: ACS applied materials & interfaces Vol. 7; no. 39; pp. 21807 - 21818
• Main Authors: Abdollahi Nejand, Bahram, Ahmadi, Vahid, Shahverdi, Hamid Reza
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 07.10.2015
• Subjects: planar perovskite solar cell; durable; low cost and temperature; sputter deposited NiO x; inorganic hole transport material; sputter deposited NiOx
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.5b05477

In this work we reported sputter deposited NiO x /Ni double layer as an HTM/contact couple in normal architecture of perovskite solar cell. A perovskite solar cell that is durable for more than 60 days was achieved, with increasing efficiency from 1.3% to 7.28% within 6 days. Moreover, low temperature direct deposition of NiO x layer on perovskite layer was introduced as a potential hole transport material for an efficient cost-effective solar cell applicable for various morphologies of perovskite layers, even for perovskite layers containing pinholes, which is a notable challenge in perovskite solar cells. The angular deposition of NiO x layers by dc reactive magnetron sputtering showed uniform and crack-free coverage of the perovskite layer with no negative impact on perovskite structure that is suitable for nickel back contact layer, surface shielding against moisture, and mechanical damages. Replacing the expensive complex materials in previous perovskite solar cells with low cost available materials introduces cost-effective scalable perovskite solar cells.