A New BODIPY Material for Pure Color and Long Lifetime Red Hyperfluorescence Organic Light-Emitting Diode

• Published in: ACS applied materials & interfaces Vol. 13; no. 15; pp. 17882 - 17891
• Main Authors: Jung, Young Hun, Karthik, Durai, Lee, Hyuna, Maeng, Jee Hyun, Yang, Ki Joon, Hwang, Soonjae, Kwon, Jang Hyuk
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 21.04.2021
• Subjects: Organic Electronic Devices; operating lifetime; BODIPY; photophysical properties; red OLED; hyperfluorescence
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.1c03175

A red fluorescent material, 1,3,7,9-tetrakis­(4-(tert-butyl)­phenyl)-5,5-difluoro-10-(2-methoxyphenyl)-5H-4l4,5l4-dipyrrolo­[1,2-c:2′,1′-f]­[1,3,2]­diazaborinine (4tBuMB), as an emitting dopant in a thermally activated delayed fluorescence (TADF) sensitized hyperfluorescence organic light-emitting diode (HFOLED) is reported. The 4tBuMB shows a high photoluminescence quantum yield (PLQY) of 99% with an emission maximum at 620 nm and a full width at half-maximum (fwhm) of 31 nm in solution. Further, it shows a deep lowest unoccupied molecular orbital (LUMO) of 3.83 eV. Thus, two TADF materials, 4CzIPN and 4CzTPN, as sensitizing hosts, are selected on the basis of a suitable LUMO level and spectrum overlap with 4tBuMB. The fabricated HFOLED device with 4CzTPN as a sensitizing host and 4tBuMB as an emitting dopant shows a maximum external quantum efficiency (EQE), an emission maximum, an fwhm, and CIE coordinates of 19.4%, 617 nm, 44 nm, and (0.64, 0.36), respectively. The electroluminance performances of the 4CzTPN sensitized device are higher than those of the 4CzIPN-based device, which is attributed to a higher Förster resonance energy transfer (FRET) rate and reduced intersystem crossing/reverse intersystem crossing (ISC/RISC) cycles of the former. Also, the 4CzTPN-based HF device shows a longer device lifetime (LT90) of 954 h than the 4CzIPN-baed device (LT90 of 57 h) at 3000 cd m–2. The higher device stability is due to the higher bond dissociation energies (BDEs) of 4CzTPN and 4tBuMB than that of 4CzIPN.