Photoconductivity Multiplication in Semiconducting Few-Layer MoTe2

We report efficient photoconductivity multiplication in few-layer 2H-MoTe2 as a direct consequence of an efficient steplike carrier multiplication with near unity quantum yield and high carrier mobility (∼45 cm2 V–1 s–1) in MoTe2. This photoconductivity multiplication is quantified using ultrafast,...

Full description

Saved in:
Bibliographic Details
Published inNano letters Vol. 20; no. 8; pp. 5807 - 5813
Main Authors Zheng, Wenhao, Bonn, Mischa, Wang, Hai I
Format Journal Article
LanguageEnglish
Published American Chemical Society 12.08.2020
Subjects
Letter
impact ionization
terahertz spectroscopy
carrier multiplication
transition metal dichalcogenides (TMDCs)
2D materials
MoTe2
Online AccessGet full text

Cover

More Information
Summary:We report efficient photoconductivity multiplication in few-layer 2H-MoTe2 as a direct consequence of an efficient steplike carrier multiplication with near unity quantum yield and high carrier mobility (∼45 cm2 V–1 s–1) in MoTe2. This photoconductivity multiplication is quantified using ultrafast, excitation-wavelength-dependent photoconductivity measurements employing contact-free terahertz spectroscopy. We discuss the possible origins of efficient carrier multiplication in MoTe2 to guide future theoretical investigations. The combination of photoconductivity multiplication and the advantageous bandgap renders MoTe2 as a promising candidate for efficient optoelectronic devices.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/acs.nanolett.0c01693