Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films

• Published in: Chemistry of materials Vol. 16; no. 24; pp. 5162 - 5168
• Main Authors: Kukli, Kaupo, Ritala, Mikko, Pilvi, Tero, Sajavaara, Timo, Leskelä, Markku, Jones, Anthony C., Aspinall, Helen C., Gilmer, David C., Tobin, Philip J.
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 30.11.2004
• Subjects: Applied sciences; Chemistry; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; General and physical chemistry; Physicochemistry of polymers; Physics; Polymers; Inorganic compounds; Organic compounds
• ISSN: 0897-4756; 1520-5002
• DOI: 10.1021/cm0401793

Amorphous PrO x based films were grown by atomic layer deposition in the temperature range 200−400 °C from Pr[N(SiMe3)2]3 and H2O on n-Si(100) and borosilicate glass substrates. The films contained considerable amounts of residual hydrogen and residual or diffused silicon. The refractive indexes of the films varied between 1.76 and 1.87. Crystallization took place after annealing at 900−1000 °C, and X-ray diffraction data indicated that the films were Pr9.33(SiO4)6O2. The effective permittivity of 70−100 nm thick films was in the range of 14−16. Annealing at 800 °C in nitrogen increased the effective permittivity to 15.6−21.0 and decreased the rechargeable trap density. Praseodymium silicate films may be applied after annealing as dielectric layers in capacitive structures.