Contactless Manipulation of Write–Read–Erase Data Storage in Diarylethene Ferroelectric Crystals

The optical manipulation of polarization has gained widespread attention because it offers a promising route to new contactless memories and switches. However, the current research basically focuses on the photocontrol of data storage rather than data reading, which cannot realize the whole process...

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Published inJournal of the American Chemical Society Vol. 144; no. 19; pp. 8633 - 8640
Main Authors Tang, Yuan-Yuan, Zeng, Yu-Ling, Xiong, Ren-Gen
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 18.05.2022
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Summary:The optical manipulation of polarization has gained widespread attention because it offers a promising route to new contactless memories and switches. However, the current research basically focuses on the photocontrol of data storage rather than data reading, which cannot realize the whole process of contactless write–read–erase data storage. Here, we present a pair of enantiomorphic diarylethene derivative ferroelectric crystals, showing a light-driven phase transition triggered by photoisomerization between the open and closed forms. Under the visible light, they exhibit a binary-domain state in the open form with white color and the band gap of 3.26 eV, while they show a single-domain state in the closed form with blue color and the band gap of 1.68 eV after UV irradiation of 254/365 nm. In addition to writing and erasing ferroelectric domains with light, we can also use light to read their color to determine the polarization state of domains. Moreover, diarylethene derivatives have better thermal stability, higher photoexcited conversion efficiency, and larger changes of the absorption wavelength between two isomers than those in salicylideneaniline derivatives. This work not only discovers the first diarylethene-based ferroelectric crystals but also successfully realizes completely contactless manipulation of write–read–erase data storage in the organic ferroelectric semiconductors.
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ISSN:0002-7863
1520-5126
DOI:10.1021/jacs.2c01069