Modeling of the Growth Rate during Top Seeded Solution Growth of SiC Using Pure Silicon as a Solvent

• Published in: Crystal growth & design Vol. 12; no. 2; pp. 909 - 913
• Main Authors: Lefebure, Julien, Dedulle, Jean-Marc, Ouisse, Thierry, Chaussende, Didier
• Format: Journal Article
• Language: English
• Published: Washington,DC American Chemical Society 01.02.2012
• Subjects: Chemical Sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; Growth from solutions; Material chemistry; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Solubility, segregation, and mixing; phase separation; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Temperature dependence; TSSG method; Growth rate; Digital simulation; Solubility; Theoretical study; Carbon; Monocrystals; Silicon carbide; Growth mechanism; Crystal growth from solutions; Modelling; Silicon
• ISSN: 1528-7483; 1528-7505
• DOI: 10.1021/cg201343w

To assist the development of high quality single crystalline SiC ingot using the top seeded solution growth process, we have implemented a numerical model with the aim of giving quantitative outcomes in addition to qualitative information. The major role of the convection patterns on the carbon flux is demonstrated. We also evidence that the carbon solubility in liquid silicon is the actual limiting parameter of the SiC solution growth process. A good agreement between computed and experimental growth rates is obtained as a function of temperature, making simulation an adapted predictive tool for the further development of the process.