Complementary Doped Source-Based Reconfigurable Schottky Diode as an Equivalence Logic Gate

• Published in: ACS omega Vol. 8; no. 25; pp. 23120 - 23129
• Main Authors: Jin, Xiaoshi, Yuan, Xiangyu, Zhang, Shouqiang, Li, Mengmeng, Liu, Xi
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 27.06.2023
• ISSN: 2470-1343; 2470-1343
• DOI: 10.1021/acsomega.3c02541

A complementary doped source-based reconfigurable Schottky diode (CDS-RSD) is proposed for the first time. Unlike other types of reconfigurable devices that have source and drain (S/D) regions with the same material, this has a complementary doped source region as well as a metal silicide drain region. Compared to three-terminal reconfigurable transistors, which have both the program gate and control gate, the proposed CDS-RSD does not have a control gate but only a program gate for reconfiguration operation. The drain electrode of the CDS-RSD is not only the output terminal of the current signal but also the input terminal of the voltage signal. Therefore, it is a reconfigurable diode based on high Schottky barriers for both the conduction band and valence band of silicon, which formed on the interface between the silicon and drain electrode. Therefore, the CDS-RSD can be regarded as the simplification of the reconfigurable field effect transistor structure on the premise of retaining the reconfigurable function. The simplified CDS-RSD is more suitable for the improvement of logic gate circuit integration. A brief manufacture process is also proposed. The device performance has been verified through device simulation. The performance of the CDS-RSD as a single-device two-input equivalence logic gate has also been investigated.