Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization

We report a straightforward method to produce high-quality nitrogen-doped graphene on SiC(0001) using direct nitrogen ion implantation and subsequent stabilization at temperatures above 1300 K. We demonstrate that double defects, which comprise two nitrogen defects in a second-nearest-neighbor (meta...

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Bibliographic Details
Published inACS nano Vol. 8; no. 7; pp. 7318 - 7324
Main Authors Telychko, Mykola, Mutombo, Pingo, Ondráček, Martin, Hapala, Prokop, Bocquet, François C, Kolorenč, Jindřich, Vondráček, Martin, Jelínek, Pavel, Švec, Martin
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 22.07.2014
Subjects
implantation
nitrogen
doping
photoemission
SiC
STM
graphene
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Summary:We report a straightforward method to produce high-quality nitrogen-doped graphene on SiC(0001) using direct nitrogen ion implantation and subsequent stabilization at temperatures above 1300 K. We demonstrate that double defects, which comprise two nitrogen defects in a second-nearest-neighbor (meta) configuration, can be formed in a controlled way by adjusting the duration of bombardment. Two types of atomic contrast of single N defects are identified in scanning tunneling microscopy. We attribute the origin of these two contrasts to different tip structures by means of STM simulations. The characteristic dip observed over N defects is explained in terms of the destructive quantum interference.
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ISSN:1936-0851
1936-086X
DOI:10.1021/nn502438k