Azo Anion Radical Complex of Rhodium as a Molecular Memory Switching Device: Isolation, Characterization, and Evaluation of Current–Voltage Characteristics

Two rare examples of azo anion diradical complexes of Rh(III) are reported. These complexes showed excellent memory switching properties with a large ON/OFF ratio and are suitable for RAM/ROM applications. Their electronic structures have been elucidated using a host of physical methods, including X...

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Published inJournal of the American Chemical Society Vol. 134; no. 15; pp. 6520 - 6523
Main Authors Paul, Nanda D., Rana, Utpal, Goswami, Sreetosh, Mondal, Tapan K., Goswami, Sreebrata
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 18.04.2012
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Summary:Two rare examples of azo anion diradical complexes of Rh(III) are reported. These complexes showed excellent memory switching properties with a large ON/OFF ratio and are suitable for RAM/ROM applications. Their electronic structures have been elucidated using a host of physical methods, including X-ray crystallography, variable-temperature magnetic susceptibility measurement, cyclic voltammetry, electron paramagnetic resonance spectroscopy, and density functional theory. The results indicate a predominant triplet state description of the systems with two ferromagnetically coupled radicals.
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ISSN:0002-7863
1520-5126
DOI:10.1021/ja212197s