Air-Stable, Solution-Processed Oxide p–n Heterojunction Ultraviolet Photodetector

Air-stable solution processed all-inorganic p–n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the inte...

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Bibliographic Details
Published inACS applied materials & interfaces Vol. 6; no. 3; pp. 1370 - 1374
Main Authors Kim, Do Young, Ryu, Jiho, Manders, Jesse, Lee, Jaewoong, So, Franky
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 12.02.2014
Subjects
ZnO
solution process
NiO
ultraviolet
photodetector
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Summary:Air-stable solution processed all-inorganic p–n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).
Bibliography:SourceType-Other Sources-1
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ObjectType-Correspondence-1
ISSN:1944-8244
1944-8252
DOI:10.1021/am4050019