Highly Efficient Metal-Free Growth of Nitrogen-Doped Single-Walled Carbon Nanotubes on Plasma-Etched Substrates for Oxygen Reduction

We have for the first time developed a simple plasma-etching technology to effectively generate metal-free particle catalysts for efficient metal-free growth of undoped and/or nitrogen-doped single-walled carbon nanotubes (CNTs). Compared with undoped CNTs, the newly produced metal-free nitrogen-con...

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Bibliographic Details
Published inJournal of the American Chemical Society Vol. 132; no. 43; pp. 15127 - 15129
Main Authors Yu, Dingshan, Zhang, Qiang, Dai, Liming
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 03.11.2010
Subjects
Electrochemistry
Microscopy, Atomic Force
Nanotubes, Carbon - chemistry
Nitrogen - chemistry
Oxidation-Reduction
Oxygen - chemistry
Silicon - chemistry
Silicon Dioxide - chemistry
Water - chemistry
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Summary:We have for the first time developed a simple plasma-etching technology to effectively generate metal-free particle catalysts for efficient metal-free growth of undoped and/or nitrogen-doped single-walled carbon nanotubes (CNTs). Compared with undoped CNTs, the newly produced metal-free nitrogen-containing CNTs were demonstrated to show relatively good electrocatalytic activity and long-term stability toward oxygen reduction reaction (ORR) in an acidic medium. Owing to the highly generic nature of the plasma etching technique, the methodology developed in this study can be applied to many other substrates for efficient growth of metal-free CNTs for various applications, ranging from energy related to electronic and to biomedical systems.
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ISSN:0002-7863
1520-5126
DOI:10.1021/ja105617z