Spatial Nonuniformity in Resistive-Switching Memory Effects of NiO

Electrically driven resistance change phenomenon in metal/NiO/metal junctions, so-called resistive switching (RS), is a candidate for next-generation universal nonvolatile memories. However, the knowledge as to RS mechanisms is unfortunately far from comprehensive, especially the spatial switching l...

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Published inJournal of the American Chemical Society Vol. 133; no. 32; pp. 12482 - 12485
Main Authors Oka, Keisuke, Yanagida, Takeshi, Nagashima, Kazuki, Kanai, Masaki, Kawai, Tomoji, Kim, Jin-Soo, Park, Bae Ho
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 17.08.2011
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Summary:Electrically driven resistance change phenomenon in metal/NiO/metal junctions, so-called resistive switching (RS), is a candidate for next-generation universal nonvolatile memories. However, the knowledge as to RS mechanisms is unfortunately far from comprehensive, especially the spatial switching location, which is crucial information to design reliable devices. In this communication, we demonstrate the identification of the spatial switching location of bipolar RS by introducing asymmetrically passivated planar NiO nanowire junctions. We have successfully identified that the bipolar RS in NiO occurs near the cathode rather than the anode. This trend can be interpreted in terms of an electrochemical redox model based on ion migration and p-type conduction.
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ISSN:0002-7863
1520-5126
DOI:10.1021/ja206063m