Wurtzite to Zinc Blende Phase Transition in GaAs Nanowires Induced by Epitaxial Burying

We bury vertical free-standing core−shell GaAs/AlGaAs nanowires by a planar GaAs overgrowth. As the nanowires get buried, their crystalline structure progressively transforms: whereas the upper emerging part retains its initial wurtzite structure, the buried part adopts the zinc blende structure of...

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Published inNano letters Vol. 8; no. 6; pp. 1638 - 1643
Main Authors Patriarche, Gilles, Glas, Frank, Tchernycheva, Maria, Sartel, Corinne, Largeau, Ludovic, Harmand, Jean-Christophe, Cirlin, George E
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 01.06.2008
Subjects
Arsenicals - chemistry
Crystallization - methods
Gallium - chemistry
Macromolecular Substances - chemistry
Materials Testing
Molecular Conformation
Nanotechnology - methods
Nanotubes - chemistry
Nanotubes - ultrastructure
Particle Size
Phase Transition
Surface Properties
Zinc - chemistry
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Summary:We bury vertical free-standing core−shell GaAs/AlGaAs nanowires by a planar GaAs overgrowth. As the nanowires get buried, their crystalline structure progressively transforms: whereas the upper emerging part retains its initial wurtzite structure, the buried part adopts the zinc blende structure of the burying layer. The burying process also suppresses all the stacking faults that existed in the wurtzite nanowires. We consider two possible mechanisms for the structural transition upon burying, examine how they can be discriminated from each other, and explain why the transition is favorable.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl080319y