Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

• Published in: Nano letters Vol. 14; no. 3; pp. 1643 - 1650
• Main Authors: Sourribes, Marion J. L, Isakov, Ivan, Panfilova, Marina, Liu, Huiyun, Warburton, Paul A
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 12.03.2014
• Subjects: Antimony; Catalytic methods; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal structure; Density; Exact sciences and technology; Indium arsenides; Materials science; Methods of nanofabrication; Molecular beam epitaxy; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Nanowires; Physics; Quantum wires; Silicon substrates; Stacking faults; Structure of solids and liquids; crystallography; crystal structure; InAs nanowires; molecular beam epitaxy; InAsSb; self-catalyzed; mobility; Catalysts; Growth mechanism; Molecular beam epitaxy; Antimony; Stacking fault density; Nanowires; Nanostructured materials; Indium arsenides; III-V compound; Nanomaterial synthesis; III-V semiconductors; Crystal structure
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl5001554

We report the growth of InAs1–x Sb x nanowires (0 ≤ x ≤ 0.15) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs1–x Sb x nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs0.85Sb0.15 nanowires than InAs nanowires.