Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition

• Published in: Nano letters Vol. 14; no. 4; pp. 1909 - 1913
• Main Authors: Schmidt, Hennrik, Wang, Shunfeng, Chu, Leiqiang, Toh, Minglin, Kumar, Rajeev, Zhao, Weijie, Castro Neto, A. H, Martin, Jens, Adam, Shaffique, Özyilmaz, Barbaros, Eda, Goki
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 09.04.2014
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; two-dimensional crystal; electronic transport; Molybdenum disulphite; chemical vapor deposition; Metallic conduction; Electronic properties; Transport properties; High density; Doping; Optoelectronic devices; Implementation; Thin films; CVD; Optical phonons; Crystallites; Limiting factor; Optical properties; Monolayers; Growth mechanism

Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quali...