Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition

• Published in: Nano letters Vol. 14; no. 4; pp. 1909 - 1913
• Main Authors: Schmidt, Hennrik, Wang, Shunfeng, Chu, Leiqiang, Toh, Minglin, Kumar, Rajeev, Zhao, Weijie, Castro Neto, A. H, Martin, Jens, Adam, Shaffique, Özyilmaz, Barbaros, Eda, Goki
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 09.04.2014
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; two-dimensional crystal; electronic transport; Molybdenum disulphite; chemical vapor deposition; Metallic conduction; Electronic properties; Transport properties; High density; Doping; Optoelectronic devices; Implementation; Thin films; CVD; Optical phonons; Crystallites; Limiting factor; Optical properties; Monolayers; Growth mechanism
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/nl4046922

Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm2 V–1 s–1 and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed.