Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics
Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and t...
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Published in | Nano letters Vol. 14; no. 6; pp. 3055 - 3063 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Washington, DC
American Chemical Society
11.06.2014
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Abstract | Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. In this paper, we demonstrate a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition. We have fabricated high-performance devices and circuits based on this heterostructure, where MoS2 is used as the transistor channel and graphene as contact electrodes and circuit interconnects. We provide a systematic comparison of the graphene/MoS2 heterojunction contact to more traditional MoS2-metal junctions, as well as a theoretical investigation, using density functional theory, of the origin of the Schottky barrier height. The tunability of the graphene work function with electrostatic doping significantly improves the ohmic contact to MoS2. These high-performance large-scale devices and circuits based on this 2D heterostructure pave the way for practical flexible transparent electronics. |
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AbstractList | Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. In this paper, we demonstrate a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition. We have fabricated high-performance devices and circuits based on this heterostructure, where MoS2 is used as the transistor channel and graphene as contact electrodes and circuit interconnects. We provide a systematic comparison of the graphene/MoS2 heterojunction contact to more traditional MoS2-metal junctions, as well as a theoretical investigation, using density functional theory, of the origin of the Schottky barrier height. The tunability of the graphene work function with electrostatic doping significantly improves the ohmic contact to MoS2. These high-performance large-scale devices and circuits based on this 2D heterostructure pave the way for practical flexible transparent electronics. |
Author | Palacios, Tomás Santos, Elton J. G Lin, Yuxuan Yu, Lili Ling, Xi Kong, Jing Kaxiras, Efthimios Lee, Yi-Hsien Dubey, Madan Shin, Yong Cheol Wang, Han |
AuthorAffiliation | Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Materials Science and Engineering National Tsing-Hua University School of Engineering and Applied Sciences Harvard University Department of Materials Science and Engineering United States Army Research Laboratory Department of Physics |
AuthorAffiliation_xml | – name: National Tsing-Hua University – name: United States Army Research Laboratory – name: School of Engineering and Applied Sciences – name: Harvard University – name: Materials Science and Engineering – name: Department of Physics – name: Department of Electrical Engineering and Computer Science – name: Massachusetts Institute of Technology – name: Department of Materials Science and Engineering |
Author_xml | – sequence: 1 givenname: Lili surname: Yu fullname: Yu, Lili email: liliyu@mit.edu – sequence: 2 givenname: Yi-Hsien surname: Lee fullname: Lee, Yi-Hsien – sequence: 3 givenname: Xi surname: Ling fullname: Ling, Xi – sequence: 4 givenname: Elton J. G surname: Santos fullname: Santos, Elton J. G – sequence: 5 givenname: Yong Cheol surname: Shin fullname: Shin, Yong Cheol – sequence: 6 givenname: Yuxuan surname: Lin fullname: Lin, Yuxuan – sequence: 7 givenname: Madan surname: Dubey fullname: Dubey, Madan – sequence: 8 givenname: Efthimios surname: Kaxiras fullname: Kaxiras, Efthimios – sequence: 9 givenname: Jing surname: Kong fullname: Kong, Jing – sequence: 10 givenname: Han surname: Wang fullname: Wang, Han email: hw254@mit.edu – sequence: 11 givenname: Tomás surname: Palacios fullname: Palacios, Tomás email: tpalacios@mit.edu |
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Keywords | flexible and transparent Molybdenum disulfide field-effect transistor integrated circuits heterostructure graphene Work functions Transport properties Schottky barriers Doping Theoretical study Boron nitride Optical systems Flexibility AND circuit CVD Graphene Transition elements Transistor channel Heterojunctions Density functional method Ohmic contacts Barrier height Electrostatics Transparent material Heterostructures |
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Snippet | Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among... |
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SubjectTerms | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Electron states Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Fullerenes and related materials; diamonds, graphite Materials science Methods of deposition of films and coatings; film growth and epitaxy Methods of electronic structure calculations Physics Specific materials Surface double layers, schottky barriers, and work functions |
Title | Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics |
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