Tribological Durability of Silane Monolayers on Silicon

We report the frictional performance and long-term tribological stability of various alkyl silane monolayer films on silicon by using pin-on-disk tribometry at ambient conditions. We show that the durability of monolayers derived from n-alkyltrichlorosilanes on silicon increases exponentially with t...

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Bibliographic Details
Published inLangmuir Vol. 27; no. 10; pp. 5909 - 5917
Main Authors Booth, Brandon D., Vilt, Steven G., Lewis, J. Ben, Rivera, Jose L., Buehler, Edward A., McCabe, Clare, Jennings, G. Kane
Format Journal Article
LanguageEnglish
Published Washington, DC American Chemical Society 17.05.2011
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Summary:We report the frictional performance and long-term tribological stability of various alkyl silane monolayer films on silicon by using pin-on-disk tribometry at ambient conditions. We show that the durability of monolayers derived from n-alkyltrichlorosilanes on silicon increases exponentially with the chain length of the silane precursor, which we relate to the cohesive energy of these monolayers through molecular dynamics simulations. X-ray photoelectron spectroscopy (XPS) was used to show that tribological damage consisted of the loss of molecular components that could be partially replaced upon exposure to a solution containing perfluorinated silane precursors. For monolayers derived from n-octadecyltrichlorosilane, a critical load was identified to be approximately 250 mN (200 MPa), above which failure of films occurred within 100 cycles of testing. Monolayers with hydroxyl surfaces exhibited reduced stabilities due to stronger tip−surface interactions. Monolayers with the capability for cross-linking exhibited much greater stabilities than monolayers where cross-linking was limited or prevented. Collectively, these results demonstrate that the mechanical durability of monolayers when subjected to a tribological load is greatly enhanced by maximizing dispersional interactions and cross-linking and minimizing tip−surface interactions.
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USDOE Office of Science (SC)
AC02-05CH11231; AC05-00OR22725
ISSN:0743-7463
1520-5827
DOI:10.1021/la104778q