Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic Applications

A double layer 2-terminal device is employed to show Na-controlled interfacial resistive switching and neuromorphic behavior. The bilayer is based on interfacing biocompatible NaNbO3 and Nb2O5, which allows the reversible uptake of Na+ in the Nb2O5 layer. We demonstrate voltage-controlled interfacia...

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Published inChemistry of materials Vol. 36; no. 11; pp. 5764 - 5774
Main Authors Gaggio, Benedetta, Jan, Atif, Muller, Moritz, Salonikidou, Barbara, Bakhit, Babak, Hellenbrand, Markus, Di Martino, Giuliana, Yildiz, Bilge, MacManus-Driscoll, Judith L.
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 11.06.2024
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Summary:A double layer 2-terminal device is employed to show Na-controlled interfacial resistive switching and neuromorphic behavior. The bilayer is based on interfacing biocompatible NaNbO3 and Nb2O5, which allows the reversible uptake of Na+ in the Nb2O5 layer. We demonstrate voltage-controlled interfacial barrier tuning via Na+ transfer, enabling conductivity modulation and spike-amplitude- and spike-timing-dependent plasticity. The neuromorphic behavior controlled by Na+ ion dynamics in biocompatible materials shows potential for future low-power sensing electronics and smart wearables with local processing.
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ISSN:0897-4756
1520-5002
1520-5002
DOI:10.1021/acs.chemmater.4c00965