Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS2

The dynamics of excited electrons and holes in single layer (SL) MoS2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS2 on a metallic substrate to directly...

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Published inNano letters Vol. 15; no. 9; pp. 5883 - 5887
Main Authors Grubišić Čabo, Antonija, Miwa, Jill A, Grønborg, Signe S, Riley, Jonathon M, Johannsen, Jens C, Cacho, Cephise, Alexander, Oliver, Chapman, Richard T, Springate, Emma, Grioni, Marco, Lauritsen, Jeppe V, King, Phil D. C, Hofmann, Philip, Ulstrup, Søren
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 09.09.2015
Subjects
time- and angle-resolved photoemission spectroscopy
excitons
Transition metal dichalcogenides
free carriers
MoS2
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Summary:The dynamics of excited electrons and holes in single layer (SL) MoS2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS2 on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS2. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.
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ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.5b01967