Geometrical Doping at the Atomic Scale in Oxide Quantum Materials

• Published in: ACS nano Vol. 17; no. 15; pp. 14814 - 14821
• Main Authors: Choi, Minsu, Jeon, Hyunwoo, Eom, Kitae, Seo, Jinsol, Roh, Seulki, Seo, Ilwan, Oh, Sang Ho, Hwang, Jungseek, Lee, Yunsang, Pickett, Warren E., Panagopoulos, Christos, Eom, Chang-Beom, Lee, Jaichan
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 08.08.2023; American Chemical Society (ACS)
• Subjects: Chemistry; Materials Science; Science & Technology - Other Topics; SrTiO3; atomic scale; metal−insulator transition; oxide; chemical doping
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.3c03038

Chemical dopants enabling a plethora of emergent physical properties have been treated as randomly and uniformly distributed in the frame of a three-dimensional doped system. However, in nanostructured architectures, the location of dopants relative to the interface or boundary can greatly influence device performance. This observation suggests that chemical dopants need to be considered as discrete defects, meaning that geometric control of chemical dopants becomes a critical aspect as the physical size of materials scales down into the nanotechnology regime. Here we show that geometrical control of dopants at the atomic scale is another fundamental parameter in chemical doping, extending beyond the kind and amount of dopants conventionally used. The geometrical control of dopants extends the class of geometrically controlled structures into an unexplored dimensionality, between 2D and 3D. It is well understood that in the middle of the progressive dimensionality change from 3D to 2D, the electronic state of doped SrTiO3 is altered from a highly symmetric charged fluid to a charge disproportionated insulating state. Our results introduce a geometrical control of dopants, namely, geometrical doping, as another axis to provide a variety of emergent electronic states via tuning of the electronic properties of the solid state.