Enhanced Single-Photon Emission from GaN Quantum Dots in Bullseye Structures

We present the design, fabrication, and detailed characterization of a photonic bullseye structure to enhance the single-photon extraction efficiency from self-assembled GaN/AlN quantum dots (QDs) emitting in the UV. Through measurements of single-photon emission under saturated pulsed excitation at...

Full description

Saved in:
Bibliographic Details
Published inACS photonics Vol. 8; no. 6; pp. 1656 - 1661
Main Authors Xia, Sijia, Aoki, Tomoyuki, Gao, Kang, Arita, Munetaka, Arakawa, Yasuhiko, Holmes, Mark J
Format Journal Article
LanguageEnglish
Published American Chemical Society 16.06.2021
Subjects
nanophotonics
quantum dot
DBR
III-nitride
bullseye
single photon
Online AccessGet full text

Cover

More Information
Summary:We present the design, fabrication, and detailed characterization of a photonic bullseye structure to enhance the single-photon extraction efficiency from self-assembled GaN/AlN quantum dots (QDs) emitting in the UV. Through measurements of single-photon emission under saturated pulsed excitation at 80 MHz, we are able to evaluate photon extraction rates of up to ∼4.36 MHz into the first element of our NA = 0.4 objective lens. Such a rate clearly exceeds the theoretical maximum for an as-grown GaN/AlN QD, and far exceeds the literature values for GaN QDs measured under similar conditions. Our work shows the strong potential for improvement of III-nitride QD-based quantum emitters toward the development of quantum technologies.
ISSN:2330-4022
2330-4022
DOI:10.1021/acsphotonics.1c00032