Memory Devices Based on Lanthanide (Sm3+, Eu3+, Gd3+) Complexes

• Published in: Inorganic chemistry Vol. 45; no. 9; pp. 3701 - 3704
• Main Authors: Fang, Junfeng, You, Han, Chen, Jiangshan, Lin, Jian, Ma, Dongge
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 01.05.2006
• ISSN: 0020-1669; 1520-510X
• DOI: 10.1021/ic051783y

Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium−tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)−poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK):  rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current−voltage characteristics by applying negative starting voltage, and more than 106 write−read−erase−reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices.