Various Structural Design Modifications: para-Substituted Diphenylphosphinopyridine Bridged Cu(I) Complexes in Organic Light-Emitting Diodes

• Published in: Inorganic chemistry Vol. 60; no. 4; pp. 2315 - 2332
• Main Authors: Busch, Jasmin M, Koshelev, Daniil S, Vashchenko, Andrey A, Fuhr, Olaf, Nieger, Martin, Utochnikova, Valentina V, Bräse, Stefan
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 15.02.2021
• ISSN: 0020-1669; 1520-510X; 1520-510X
• DOI: 10.1021/acs.inorgchem.0c03187

The well-known system of dinuclear Cu­(I) complexes bridged by 2-(diphenylphosphino)­pyridine (PyrPhos) derivatives Cu2X2L3 and Cu2X2LP2 (L = bridging ligand, P = ancillary ligand) goes along with endless variation options for tunability. In this work, the influence of substituents and modifications on the phosphine moiety of the NP-bridging ligand was investigated. In previous studies, the location of the lowest unoccupied molecular orbital (LUMO) of the copper complexes of the PyrPhos family was found to be located on the NP-bridging ligand and enabled color tuning in the whole visible spectrum. A multitude of dinuclear Cu­(I) complexes based on the triple methylated 2-(bis­(4-methylphenyl)­phosphino)-4-methylpyridine (Cu-1b-H, Cu-1b-MeO, and Cu-1b-F) up to complexes bearing 2-(bis­(4-fluorophenyl)­phosphino)­pyridine (Cu-6a-H) with electron-withdrawing fluorine atoms over many other variations on the NP-bridging ligands were synthesized. Almost all copper complexes were confirmed via single crystal X-ray diffraction analysis. Besides theoretical TDDFT-studies of the electronic properties and photophysical measurements, the majority of the phosphino-modified Cu­(I) complexes was tested in solution-processed organic light-emitting diodes (OLEDs) with different heterostructure variations. The best results of the OLED devices were obtained with copper emitter Cu-1b-H in a stack architecture of ITO/PEDOT-PSS (50 nm)/poly-TPD (15 nm)/20 wt % Cu­(I) emitter:CBP:TcTA(7:3) (45 nm)/TPBi (30 nm)/LiF­(1 nm)/Al (>100 nm) with a high brightness of 5900 Cd/m2 and a good current efficiency of 3.79 Cd/A.