Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires

The origin of deflections of semiconductor nanowires (NWs) induced by an electron beam in scanning electron microscopy has been subject to different interpretations. Similarly, the subsequent clumping together of NWs into bundles is frequently observed, but no interpretation has yet been advanced. H...

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Published inACS nano Vol. 8; no. 9; pp. 8932 - 8941
Main Authors Carapezzi, Stefania, Priante, Giacomo, Grillo, Vincenzo, Montès, Laurent, Rubini, Silvia, Cavallini, Anna
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 23.09.2014
Subjects
Engineering Sciences
Micro and nanotechnologies
Microelectronics
surface engineering
self-assembly
adhesion
nanoarchitectonics
nanowire arrays
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Summary:The origin of deflections of semiconductor nanowires (NWs) induced by an electron beam in scanning electron microscopy has been subject to different interpretations. Similarly, the subsequent clumping together of NWs into bundles is frequently observed, but no interpretation has yet been advanced. Here we present results on the bundling of NWs following the intentional bending by an electron beam. Furthermore, we extend the concept of lateral collapse, usually applied to fibrillar architectures mimicking the adhesiveness of natural surfaces (the so-called Gecko effect), to analyze the mechanism of the NW bundle formation. We demonstrate how the geometry of the NW arrays and the mechanical properties of the composing materials govern bundling and how these parameters should be taken into account in the design of NW arrays both for avoiding vertical misalignment when detrimental and for achieving patterning of NW arrays into nanoarchitectures.
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ISSN:1936-0851
1936-086X
1936-086X
DOI:10.1021/nn503629d