Influence of pH on the Quantum-Size-Controlled Photoelectrochemical Etching of Epitaxial InGaN Quantum Dots
Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We fi...
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Published in | Journal of physical chemistry. C Vol. 119; no. 50; pp. 28194 - 28198 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Chemical Society
17.12.2015
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Subjects | |
Online Access | Get full text |
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Summary: | Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. At pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized. |
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Bibliography: | USDOE Office of Science (SC), Basic Energy Sciences (BES) AC04-94AL85000 SAND-2015-9888J |
ISSN: | 1932-7447 1932-7455 |
DOI: | 10.1021/acs.jpcc.5b09555 |