Valence Band Splitting in Wurtzite InGaAs Nanoneedles Studied by Photoluminescence Excitation Spectroscopy

We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent Raman spectroscopy. We find that the heavy-hole an...

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Published inACS nano Vol. 8; no. 11; pp. 11440 - 11446
Main Authors Wang, Xiaodong, Zardo, Ilaria, Spirkoska, Danče, Yazji, Sara, Ng, Kar Wei, Ko, Wai Son, Chang-Hasnain, Connie J, Finley, Jonathan J, Abstreiter, Gerhard
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 25.11.2014
Subjects
Band structure of solids
Excitation
Nanostructure
Photoluminescence
Raman spectroscopy
Spectroscopy
Splitting
Wurtzite
wurtzite
photoluminescence excitation spectroscopy
band structure
Raman spectroscopy
InGaAs nanoneedle
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Summary:We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent Raman spectroscopy. We find that the heavy-hole and light-hole splitting is ∼95 meV at 10 K and the Stokes shift is in the range of 35–55 meV. These findings provide important insight in the band structure of wurtzite InGaAs that could be used for future bandgap engineering.
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ISSN:1936-0851
1936-086X
DOI:10.1021/nn504512u