Flexoelectric Thin-Film Photodetectors

The flexoelectric effect, which manifests itself as a strain-gradient-induced electrical polarization, has triggered great interest due to its ubiquitous existence in crystalline materials without the limitation of lattice symmetry. Here, we propose a flexoelectric photodetector based on a thin-film...

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Bibliographic Details
Published inNano letters Vol. 21; no. 7; pp. 2946 - 2952
Main Authors Wu, Ming, Jiang, Zhizheng, Lou, Xiaojie, Zhang, Fan, Song, Dongsheng, Ning, Shoucong, Guo, Mengyao, Pennycook, Stephen J, Dai, Ji-yan, Wen, Zheng
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 14.04.2021
Subjects
Flexoelectric effect
strain gradient
thin film
heterostructure
photovoltaic effect
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Summary:The flexoelectric effect, which manifests itself as a strain-gradient-induced electrical polarization, has triggered great interest due to its ubiquitous existence in crystalline materials without the limitation of lattice symmetry. Here, we propose a flexoelectric photodetector based on a thin-film heterostructure. This prototypical device is demonstrated by epitaxial LaFeO3 thin films grown on LaAlO3 substrates. A giant strain gradient of the order of 106/m is achieved in LaFeO3 thin films, giving rise to an obvious flexoelectric polarization and generating a significant photovoltaic effect in the LaFeO3-based heterostructures with nanosecond response under light illumination. This work not only demonstrates a novel self-powered photodetector different from the traditional interface-type structures, such as the p–n and Schottky junctions but also opens an avenue to design practical flexoelectric devices for nanoelectronics applications.
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ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.1c00055