Atomic Scale Alignment of Copper-Germanide Contacts for Ge Nanowire Metal Oxide Field Effect Transistors
In this letter, we report on the formation, of copper-germanide/germanium nanowire (NW) heterostructures with atomically sharp interfaces. The copper-germanide (Cu3Ge) formation process is enabled by a chemical reaction between metallic Cu pads and vapor−liquid−solid (VLS) grown Ge-NWs. The atomic s...
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Published in | Nano letters Vol. 9; no. 11; pp. 3739 - 3742 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Washington, DC
American Chemical Society
01.11.2009
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Subjects | |
Online Access | Get full text |
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Summary: | In this letter, we report on the formation, of copper-germanide/germanium nanowire (NW) heterostructures with atomically sharp interfaces. The copper-germanide (Cu3Ge) formation process is enabled by a chemical reaction between metallic Cu pads and vapor−liquid−solid (VLS) grown Ge-NWs. The atomic scale aligned formation of the Cu3Ge segments is controlled by in situ SEM monitoring at 310 °C thereby enabling length control of the intrinsic Ge-NW down to a few nanometers. The single crystal Cu3Ge/Ge/Cu3Ge heterostructures were used to fabricate p-type Ge-NW field effect transistors with Schottky Cu3Ge source/drain contacts. Temperature dependent I /V measurements revealed the metallic properties of the Cu3Ge contacts with a maximum current density of 5 × 107 A/cm2. According to the thermoionic emission theory, we determined an effective Schottky barrier height of 218 meV. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl9019243 |