Field Dependent Transport Properties in InAs Nanowire Field Effect Transistors

• Published in: Nano letters Vol. 8; no. 10; pp. 3114 - 3119
• Main Authors: Dayeh, Shadi A, Susac, Darija, Kavanagh, Karen L, Yu, Edward T, Wang, Deli
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 01.10.2008
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Materials science; Molecular electronics, nanoelectronics; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Negative differential conductivity; Deformation; Transport properties; High density; Velocity distribution; Indium arsenides; Nanoelectronics; Field effect transistor; Nanowire device; High field; Numerical simulation; Nanowires; Phonon scattering; Scanning transmission electron microscopy; Current density; Nanostructured materials; Transconductance; III-V semiconductors

We present detailed studies of the field dependent transport properties of InAs nanowire field-effect transistors. Transconductance dependence on both vertical and lateral fields is discussed. Velocity-field plots are constructed from a large set of output and transfer curves that show negative diff...