Field Dependent Transport Properties in InAs Nanowire Field Effect Transistors

• Published in: Nano letters Vol. 8; no. 10; pp. 3114 - 3119
• Main Authors: Dayeh, Shadi A, Susac, Darija, Kavanagh, Karen L, Yu, Edward T, Wang, Deli
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 01.10.2008
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Materials science; Molecular electronics, nanoelectronics; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Negative differential conductivity; Deformation; Transport properties; High density; Velocity distribution; Indium arsenides; Nanoelectronics; Field effect transistor; Nanowire device; High field; Numerical simulation; Nanowires; Phonon scattering; Scanning transmission electron microscopy; Current density; Nanostructured materials; Transconductance; III-V semiconductors
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl801256p

We present detailed studies of the field dependent transport properties of InAs nanowire field-effect transistors. Transconductance dependence on both vertical and lateral fields is discussed. Velocity-field plots are constructed from a large set of output and transfer curves that show negative differential conductance behavior and marked mobility degradation at high injection fields. Two dimensional electrothermal simulations at current densities similar to those measured in the InAs NWFET devices indicate that a significant temperature rise occurs in the channel due to enhanced phonon scattering that leads to the observed mobility degradation. Scanning transmission electron microscopy measurements on devices operated at high current densities reveal arsenic vaporization and crystal deformation in the subject nanowires.