Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory

The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined expe...

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Published inACS applied materials & interfaces Vol. 6; no. 7; pp. 5056 - 5060
Main Authors Calka, Pauline, Sowinska, Malgorzata, Bertaud, Thomas, Walczyk, Damian, Dabrowski, Jarek, Zaumseil, Peter, Walczyk, Christian, Gloskovskii, Andrei, Cartoixà, Xavier, Suñé, Jordi, Schroeder, Thomas
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 09.04.2014
Subjects
oxygen diffusion
RRAM
Ti/HfO2
amorphous HfO2
reliability
oxygen vacancy stability
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Summary:The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental–theoretical approach. Based on the use of oxygen-isotope marked Hf*O2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.
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ISSN:1944-8244
1944-8252
DOI:10.1021/am500137y