You, M., Sun, Q., Yin, L., Fan, J., Liang, X., Li, X., . . . Liu, J. (2016). 2.3 µ m InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate. Journal of nanomaterials, 2016, 1-4. https://doi.org/10.1155/2016/8393502
Chicago Style (17th ed.) CitationYou, Minghui, Qixiang Sun, Liping Yin, Juanjuan Fan, Xuemei Liang, Xue Li, Xiuling Yu, Shijun Li, and Jingshen Liu. "2.3 µ M InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate." Journal of Nanomaterials 2016 (2016): 1-4. https://doi.org/10.1155/2016/8393502.
MLA (9th ed.) CitationYou, Minghui, et al. "2.3 µ M InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate." Journal of Nanomaterials, vol. 2016, 2016, pp. 1-4, https://doi.org/10.1155/2016/8393502.