2.3  µ m InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate

We present 2.3  μ m InGaAsSb/AlGaAsSb type I laser diodes (LDs) on GaAs substrate; a superlattice (SL) layer was introduced as an interconnecting layer playing an important role in manipulating the optical field distribution and reducing free-carrier absorption in multiquantum wells (MQWs) for achie...

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Published inJournal of nanomaterials Vol. 2016; pp. 1 - 4
Main Authors You, Minghui, Sun, Qixiang, Yin, Liping, Fan, Juanjuan, Liang, Xuemei, Li, Xue, Yu, Xiuling, Li, Shijun, Liu, Jingshen
Format Journal Article
LanguageEnglish
Published 01.01.2016
Subjects
Absorption
Gallium arsenide
Laser diodes
Nanomaterials
Optimization
Quantum wells
Substrates
Superlattices
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Summary:We present 2.3  μ m InGaAsSb/AlGaAsSb type I laser diodes (LDs) on GaAs substrate; a superlattice (SL) layer was introduced as an interconnecting layer playing an important role in manipulating the optical field distribution and reducing free-carrier absorption in multiquantum wells (MQWs) for achieving balanced and optimal LDs performance. Accordingly, power of 8.6 mW was obtained with 2.3  μ m wavelength. Our results demonstrate that superlattice layer may open a new avenue for high performance and improvement in mid-infrared laser diode.
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ISSN:1687-4110
1687-4129
DOI:10.1155/2016/8393502