2D Monolayers for Superior Transparent Electromagnetic Interference Shielding

With countless modern technologies utilizing wireless communication, materials that can selectively allow transmission of visible light and prevent transmission of low frequency GHz electromagnetic interference (EMI) are needed. Recently, 2D materials such as graphene, transition metal dichalcogenid...

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Bibliographic Details
Published inACS nano Vol. 16; no. 6; pp. 9498 - 9509
Main Authors Yost, Dillon C., Friedman, Adam L., Hanbicki, Aubrey T., Grossman, Jeffrey C.
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 28.06.2022
American Chemical Society (ACS)
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Summary:With countless modern technologies utilizing wireless communication, materials that can selectively allow transmission of visible light and prevent transmission of low frequency GHz electromagnetic interference (EMI) are needed. Recently, 2D materials such as graphene, transition metal dichalcogenides, and MXenes have shown promise for such applications. Despite the rapid advances, little progress has been made in identifying 2D monolayers with intrinsically higher visible transmittance (T vis) and shielding effectiveness (SE). With endless variations in structure and composition, the 2D materials space is too large for systematic experimental investigation. To tackle this challenge, we perform a high-throughput computational screening. Using an atomistic first-principles method, we simultaneously calculate T vis and SE of 7000 2D monolayer materials. We identify 26 monolayer materials with excellent properties of >98% T vis and >5 dB SE (∼70% EMI attenuation). The top candidate, an AgSe2 monolayer with predicted 98.53% T vis and 12.53 dB SE (∼94% EMI attenuation), is a significant improvement over the state-of-the-art, graphene, with 96.7% T vis and 3.04 dB SE (∼40% EMI attenuation). Additionally, we gain physical insights into the transparent EMI shielding performance of 2D monolayers and their electronic structure, elucidating the role of surface terminations and nearly free electron states.
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USDOE
AC02-05CH11231
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.2c02556