2D Monolayers for Superior Transparent Electromagnetic Interference Shielding
With countless modern technologies utilizing wireless communication, materials that can selectively allow transmission of visible light and prevent transmission of low frequency GHz electromagnetic interference (EMI) are needed. Recently, 2D materials such as graphene, transition metal dichalcogenid...
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Published in | ACS nano Vol. 16; no. 6; pp. 9498 - 9509 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Chemical Society
28.06.2022
American Chemical Society (ACS) |
Subjects | |
Online Access | Get full text |
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Summary: | With countless modern technologies utilizing wireless communication, materials that can selectively allow transmission of visible light and prevent transmission of low frequency GHz electromagnetic interference (EMI) are needed. Recently, 2D materials such as graphene, transition metal dichalcogenides, and MXenes have shown promise for such applications. Despite the rapid advances, little progress has been made in identifying 2D monolayers with intrinsically higher visible transmittance (T vis) and shielding effectiveness (SE). With endless variations in structure and composition, the 2D materials space is too large for systematic experimental investigation. To tackle this challenge, we perform a high-throughput computational screening. Using an atomistic first-principles method, we simultaneously calculate T vis and SE of 7000 2D monolayer materials. We identify 26 monolayer materials with excellent properties of >98% T vis and >5 dB SE (∼70% EMI attenuation). The top candidate, an AgSe2 monolayer with predicted 98.53% T vis and 12.53 dB SE (∼94% EMI attenuation), is a significant improvement over the state-of-the-art, graphene, with 96.7% T vis and 3.04 dB SE (∼40% EMI attenuation). Additionally, we gain physical insights into the transparent EMI shielding performance of 2D monolayers and their electronic structure, elucidating the role of surface terminations and nearly free electron states. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 USDOE AC02-05CH11231 |
ISSN: | 1936-0851 1936-086X |
DOI: | 10.1021/acsnano.2c02556 |