Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride

Monolayer hexagonal boron nitride (hBN) has attracted interest as an ultrathin tunnel barrier or environmental protection layer. Recently, wafer-scale hBN growth on Cu(111) was developed for semiconductor chip applications. For basic research and technology, understanding how hBN perturbs underlying...

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Published inNano letters Vol. 22; no. 11; pp. 4608 - 4615
Main Authors Zerger, Caleb Z., Rodenbach, Linsey K., Chen, Yi-Ting, Safvati, Benjamin, Brubaker, Morgan Z., Tran, Steven, Chen, Tse-An, Li, Ming-Yang, Li, Lain-Jong, Goldhaber-Gordon, David, Manoharan, Hari C.
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 08.06.2022
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Summary:Monolayer hexagonal boron nitride (hBN) has attracted interest as an ultrathin tunnel barrier or environmental protection layer. Recently, wafer-scale hBN growth on Cu(111) was developed for semiconductor chip applications. For basic research and technology, understanding how hBN perturbs underlying electronically active layers is critical. Encouragingly, hBN/Cu(111) has been shown to preserve the Cu(111) surface state (SS), but it was unknown how tunneling into this SS through hBN varies spatially. Here, we demonstrate that the Cu(111) SS under wafer-scale hBN is homogeneous in energy and spectral weight over nanometer length scales and across atomic terraces. In contrast, a new spectral featurenot seen on bare Cu(111)varies with atomic registry and shares the spatial periodicity of the hBN/Cu(111) moiré. This work demonstrates that, for some 2D electron systems, an hBN overlayer can act as a protective yet remarkably transparent window on fragile low-energy electronic structure below.
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USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
AC02-76SF00515; ECCS1542152
National Science Foundation (NSF)
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.1c04274