Optimization of Thermal Conductance at Interfaces Using Machine Learning Algorithms

• Published in: ACS applied materials & interfaces Vol. 14; no. 28; pp. 32590 - 32597
• Main Authors: Rustam, Sabiha, Schram, Malachi, Lu, Zexi, Chaka, Anne M., Rosenthal, W. Steven, Pfaendtner, Jim
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 20.07.2022; American Chemical Society (ACS)
• Subjects: Bayesian optimization; INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; interatomic mixing; interfacial thermal conductance; molecular dynamics simulation; Si/Al interface; Surfaces, Interfaces, and Applications; Bayesian optimization; interfacial thermal conductance; Si/Al interface; molecular dynamics simulation; interatomic mixing
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.1c23222

Optimization of thermal transport across the interface of two different materials is critical to micro-/nanoscale electronic, photonic, and phononic devices. Although several examples of compositional intermixing at the interfaces having a positive effect on interfacial thermal conductance (ITC) have been reported, an optimum arrangement has not yet been determined because of the large number of potential atomic configurations and the significant computational cost of evaluation. On the other hand, computation-driven materials design efforts are rising in popularity and importance. Yet, the scalability and transferability of machine learning models remain as challenges in creating a complete pipeline for the simulation and analysis of large molecular systems. In this work we present a scalable Bayesian optimization framework, which leverages dynamic spawning of jobs through the Message Passing Interface (MPI) to run multiple parallel molecular dynamics simulations within a parent MPI job to optimize heat transfer at the silicon and aluminum (Si/Al) interface. We found a maximum of 50% increase in the ITC when introducing a two-layer intermixed region that consists of a higher percentage of Si. Because of the random nature of the intermixing, the magnitude of increase in the ITC varies. We observed that both homogeneity/heterogeneity of the intermixing and the intrinsic stochastic nature of molecular dynamics simulations account for the variance in ITC.