Organometallic azides as precursors for aluminum nitride thin films

Authors synthesize volatile azides of the formula [R sub 2 AlN sub 3 ] sub 3 (R=CH sub 3 , C sub 2 H sub 5 ), which are pyrolyzed from the gas phase on Si < 100 > substrates at 400- 600 degrees C to give amorphous, uniform films. XPS analysis indicates AlN is formed.

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Bibliographic Details
Published inChemistry of materials Vol. 1; no. 1; pp. 119 - 124
Main Authors Boyd, David C, Haasch, Richard T, Mantell, Daniel R, Schulze, Roland K, Evans, John F, Gladfelter, Wayne L
Format Journal Article
LanguageEnglish
Published American Chemical Society 01.01.1989
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Summary:Authors synthesize volatile azides of the formula [R sub 2 AlN sub 3 ] sub 3 (R=CH sub 3 , C sub 2 H sub 5 ), which are pyrolyzed from the gas phase on Si < 100 > substrates at 400- 600 degrees C to give amorphous, uniform films. XPS analysis indicates AlN is formed.
Bibliography:ark:/67375/TPS-W40TK38V-3
istex:92A3330A52466DEEB6FBC1BB1FAA2F88D50E25C4
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0897-4756
1520-5002
DOI:10.1021/cm00001a023