Flexible Boron-Doped Laser-Induced Graphene Microsupercapacitors

Heteroatom-doped graphene materials have been intensely studied as active electrodes in energy storage devices. Here, we demonstrate that boron-doped porous graphene can be prepared in ambient air using a facile laser induction process from boric acid containing polyimide sheets. At the same time, a...

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Bibliographic Details
Published inACS nano Vol. 9; no. 6; pp. 5868 - 5875
Main Authors Peng, Zhiwei, Ye, Ruquan, Mann, Jason A, Zakhidov, Dante, Li, Yilun, Smalley, Preston R, Lin, Jian, Tour, James M
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 23.06.2015
Subjects
flexible
energy storage
boron-doped
laser induction
microsupercapacitor
graphene
porous graphene
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Summary:Heteroatom-doped graphene materials have been intensely studied as active electrodes in energy storage devices. Here, we demonstrate that boron-doped porous graphene can be prepared in ambient air using a facile laser induction process from boric acid containing polyimide sheets. At the same time, active electrodes can be patterned for flexible microsupercapacitors. As a result of boron doping, the highest areal capacitance of as-prepared devices reaches 16.5 mF/cm2, 3 times higher than nondoped devices, with concomitant energy density increases of 5–10 times at various power densities. The superb cyclability and mechanical flexibility of the device are well-maintained, showing great potential for future microelectronics made from this boron-doped laser-induced graphene material.
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ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.5b00436