Nonplanar Nanoscale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing

• Published in: ACS nano Vol. 9; no. 5; pp. 5255 - 5263
• Main Authors: Rojas, Jhonathan P, Torres Sevilla, Galo A, Alfaraj, Nasir, Ghoneim, Mohamed T, Kutbee, Arwa T, Sridharan, Ashvitha, Hussain, Muhammad Mustafa
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 26.05.2015
• Subjects: nonplanar; FinFETs; asymmetric surface; soft material; double-transfer
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.5b00686

The ability to incorporate rigid but high-performance nanoscale nonplanar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nanoscale, nonplanar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stacks, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 μm gate length, exhibits an I ON value of nearly 70 μA/μm (V DS = 2 V, V GS = 2 V) and a low subthreshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device’s performance with insignificant deterioration even at a high bending state.