Metal Sheet of Atomic Thickness Embedded in Silicon

• Published in: ACS nano Vol. 15; no. 12; pp. 19357 - 19363
• Main Authors: Bondarenko, Leonid V, Tupchaya, Alexandra Y, Vekovshinin, Yurii E, Gruznev, Dimitry V, Mihalyuk, Alexey N, Olyanich, Dmitry A, Ivanov, Yurii P, Matetskiy, Andrey V, Zotov, Andrey V, Saranin, Alexander A
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 28.12.2021
• Subjects: 2D compounds; nickel; silicon; transport measurements; delta layer
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.1c05669

The controlled confinement of the metallic delta-layer to a single atomic plane has so far remained an unsolved problem. In the present study, the delta-type structure with atomic sheet of NiSi2 silicide embedded into a crystalline Si matrix has been fabricated using room-temperature overgrowth of a Si film onto the Tl/NiSi2/Si­(111) atomic sandwich in ultrahigh vacuum. Tl atoms segregate at the growing Si film surface, and the 1.5–3.0 nm thick epitaxially crystalline Si layer forms atop the NiSi2 sheet. Confinement of the NiSi2 layer to a single atomic plane has been directly confirmed by transmission electron microscopy. The NiSi2 delta-layer demonstrates a p-type conductivity associated with the electronic transport through the two hole-like and one electron-like interface-state bands. The basic structural and electronic properties of the NiSi2 delta-layer remain after keeping the sample in air for one year.