Chemical vapor deposition of copper from copper(I) trimethylphosphine compounds

• Published in: Chemistry of materials Vol. 2; no. 6; pp. 636 - 639
• Main Authors: Hampden-Smith, M. J, Kodas, T. T, Paffett, M, Farr, J. D, Shin, H. K
• Format: Journal Article
• Language: English
• Published: American Chemical Society 01.11.1990
• ISSN: 0897-4756; 1520-5002
• DOI: 10.1021/cm00012a007

Chemical vapor deposition (CVD) of metals from metal organic precursor compounds has been the subject of much interest in recent years because it is a nondirectional process in which objects with complex shapes or surface topographies may be coated or infiltrated. This is often an advantage over many physical vapor deposition techniques whose line-of-sight nature make coating nonplanar objects difficult. Of the metals used in microelectronics applications, Cu, is of great interest as a result of its relatively low resistivity. It is used extensively in packages for electronic chips and is a candidate for the metallization of chips themselves. Preliminary findings involving the Cu(I) compounds cyclopentadienylcopper trimethylphosphine, ( eta exp 5 -C sub 5 H sub 5 )CuPMe sub 3 , and tert-butoxy-copper trimethylphosphine, (t-BuO)CuPMe sub 3 are described. Graphs, Photomicrographs. 25 ref.--AA