A High Efficiency Surface Modification Process for Multiwalled Carbon Nanotubes by Electron Cyclotron Resonance Plasma
A novel process of surface modification for multiwalled carbon nanotubes (MWCNTs) by using electron cyclotron resonance plasma is proposed. The process uses a H2/O2 gas mixture as etching gas and applies a bias voltage of −250 DCV to the process stage to extract and accelerate hydrogen and oxygen ca...
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Published in | Journal of physical chemistry. C Vol. 112; no. 47; pp. 18431 - 18436 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
27.11.2008
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Subjects | |
Online Access | Get full text |
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Summary: | A novel process of surface modification for multiwalled carbon nanotubes (MWCNTs) by using electron cyclotron resonance plasma is proposed. The process uses a H2/O2 gas mixture as etching gas and applies a bias voltage of −250 DCV to the process stage to extract and accelerate hydrogen and oxygen cations. The generated high density and high incident energy cations are employed to create defects on the surface of nanotubes through ion bombardment. The oxygen cations with high reduction potential are simultaneously applied, oxidizing the surface of the nanotubes so as to form functional groups on the side walls most effectively. Additionally, being far from the plasma sheath, the MWCNTs can be maintained at a lower temperature to prevent from being decomposed under the high energy plasma. The efficiency of this method was systematically analyzed using X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and thermogravimetric analysis. The experimental results have shown that the proposed method is a highly effective way to functionalize MWCNTs, resulting in the nanotubes with high concentration of oxygen-containing functional groups and minimal structural damage within very short process time. |
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Bibliography: | istex:3FCF0E070D9D2FC391EED55F5E811D847F6EE63F ark:/67375/TPS-KBD8G78X-B |
ISSN: | 1932-7447 1932-7455 |
DOI: | 10.1021/jp8028165 |