Thermally Activated Processes for Ferromagnet Intercalation in Graphene-Heavy Metal Interfaces

The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stab...

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Published inACS applied materials & interfaces Vol. 12; no. 3; pp. 4088 - 4096
Main Authors Ajejas, Fernando, Anadon, Alberto, Gudin, Adrian, Diez, José Manuel, Ayani, Cosme G, Olleros-Rodríguez, Pablo, de Melo Costa, Leticia, Navío, Cristina, Gutierrez, Alejandro, Calleja, Fabian, Vázquez de Parga, Amadeo L, Miranda, Rodolfo, Camarero, Julio, Perna, Paolo
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 22.01.2020
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Summary:The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by intercalation through graphene of different metals. Using photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM), we achieve a nanoscale control of thermally activated intercalation of a homogeneous ferromagnetic (FM) layer underneath epitaxial Gr grown onto (111)-oriented heavy metal (HM) buffers deposited, in turn, onto insulating oxide surfaces. XPS and STM demonstrate that Co atoms evaporated on top of Gr arrange in 3D clusters and, upon thermal annealing, penetrate through and diffuse below Gr in a 2D fashion. The complete intercalation of the metal occurs at specific temperatures, depending on the type of metallic buffer. The activation energy and the optimum temperature for the intercalation processes are determined. We describe a reliable method to fabricate and characterize in situ high-quality Gr-FM/HM heterostructures, enabling the realization of novel spin-orbitronic devices that exploit the extraordinary properties of Gr.
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ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.9b19159