A Simple, Low Cost Ink System for Drop-on-Demand Printing High Performance Metal Oxide Dielectric Film at Low Temperature

We have successfully developed an ink system containing inexpensive raw materials through a simple process and have printed ZrO x dielectric film at a relatively low annealing temperature of 250 °C. The ZrO x dielectric film afforded a leakage current density of 5.4 × 10–6 A/cm2 at 1 MV/cm and a die...

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Published inACS applied materials & interfaces Vol. 11; no. 5; pp. 5193 - 5199
Main Authors Zhu, Zhennan, Zhang, Jianhua, Zhou, ZhongWei, Ning, Honglong, Cai, Wei, Wei, Jinglin, Zhou, Shangxiong, Yao, Rihui, Lu, Xubing, Peng, Junbiao
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 06.02.2019
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Summary:We have successfully developed an ink system containing inexpensive raw materials through a simple process and have printed ZrO x dielectric film at a relatively low annealing temperature of 250 °C. The ZrO x dielectric film afforded a leakage current density of 5.4 × 10–6 A/cm2 at 1 MV/cm and a dielectric constant of 10 and shows a promising future for flexible electronics. The ink system shows a temperature-induced gelation behavior, and a gel network is formed when the temperature rises. A high concentration of oxide precursors is obtained near the network area through the absorption function of polymer groups, and thus oxide structure can be formed at a relatively low temperature due to the shorter diffusion path of precursor polymerization. The microstructure of the printed ZrO x film was investigated by high resolution transmission electron microscopy (HRTEM), Fourier-transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS), and the effect of annealing temperature on film structure was studied.
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ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.8b14328