A Simple, Low Cost Ink System for Drop-on-Demand Printing High Performance Metal Oxide Dielectric Film at Low Temperature
We have successfully developed an ink system containing inexpensive raw materials through a simple process and have printed ZrO x dielectric film at a relatively low annealing temperature of 250 °C. The ZrO x dielectric film afforded a leakage current density of 5.4 × 10–6 A/cm2 at 1 MV/cm and a die...
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Published in | ACS applied materials & interfaces Vol. 11; no. 5; pp. 5193 - 5199 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Chemical Society
06.02.2019
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Subjects | |
Online Access | Get full text |
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Summary: | We have successfully developed an ink system containing inexpensive raw materials through a simple process and have printed ZrO x dielectric film at a relatively low annealing temperature of 250 °C. The ZrO x dielectric film afforded a leakage current density of 5.4 × 10–6 A/cm2 at 1 MV/cm and a dielectric constant of 10 and shows a promising future for flexible electronics. The ink system shows a temperature-induced gelation behavior, and a gel network is formed when the temperature rises. A high concentration of oxide precursors is obtained near the network area through the absorption function of polymer groups, and thus oxide structure can be formed at a relatively low temperature due to the shorter diffusion path of precursor polymerization. The microstructure of the printed ZrO x film was investigated by high resolution transmission electron microscopy (HRTEM), Fourier-transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS), and the effect of annealing temperature on film structure was studied. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1944-8244 1944-8252 |
DOI: | 10.1021/acsami.8b14328 |