Sub‑2 V, Transfer-Stamped Organic/Inorganic Complementary Inverters Based on Electrolyte-Gated Transistors

• Published in: ACS applied materials & interfaces Vol. 10; no. 47; pp. 40672 - 40680
• Main Authors: Cho, Kyung Gook, Kim, Hyun Je, Yang, Hae Min, Seol, Kyoung Hwan, Lee, Seung Ju, Lee, Keun Hyung
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 28.11.2018
• Subjects: complementary inverter; electrolyte-gated transistor; low-voltage operation; ionogel; transfer stamping
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.8b13140

Organic/inorganic hybrid complementary inverters operating at low voltages (1 V or less) were fabricated by transfer-stamping organic p-type poly­(3-hexylthiophene) (P3HT) and inorganic n-type zinc oxide (ZnO) electrolyte-gated transistors (EGTs). A semicrystalline homopolymer-based gel electrolyte, or an ionogel, was also transfer-stamped on the semiconductors for use as a high-capacitance gate insulator. For the ionogel stamping, the thermoreversible crystallization of phase-separated homopolymer crystals, which act as network cross-links, was employed to improve the contact between the gel and the semiconductor channel. The homopolymer ionogel-gated P3HT transistor exhibited a high hole mobility of 2.81 cm2/(V s), and the ionogel-gated n-type ZnO transistors also showed a high electron mobility of 2.06 cm2/(V s). The transfer-stamped hybrid complementary inverter based on the P3HT and ZnO EGTs showed a low-voltage operation with appropriate inversion characteristics including a high voltage gain of ∼18. These results demonstrate that the transfer-stamping strategy provides a facile and reliable processing route for fabricating electrolyte-gated transistors and logic circuits.