Down-Scalable and Ultra-fast Memristors with Ultra-high Density Three-Dimensional Arrays of Perovskite Quantum Wires

• Published in: Nano letters Vol. 21; no. 12; pp. 5036 - 5044
• Main Authors: Poddar, Swapnadeep, Zhang, Yuting, Gu, Leilei, Zhang, Daquan, Zhang, Qianpeng, Yan, Shuai, Kam, Matthew, Zhang, Sifan, Song, Zhitang, Hu, Weida, Liao, Lei, Fan, Zhiyong
• Format: Journal Article
• Language: English
• Published: American Chemical Society 23.06.2021
• Subjects: 14 nm lateral dimension; perovskite quantum wires; crossbar array; resistive RAM; sub-ns switching speed
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.1c00834

With strikingly high speed, data retention ability and storage density, resistive RAMs have emerged as a forerunning nonvolatile memory. Here we developed a Re-RAM with ultra-high density array of monocrystalline perovskite quantum wires (QWs) as the switching matrix with a metallic silver conducting pathway. The devices demonstrated high ON/OFF ratio of ∼107 and ultra-fast switching speed of ∼100 ps which is among the fastest in literature. The devices also possess long retention time of over 2 years and record high endurance of ∼6 × 106 cycles for all perovskite Re-RAMs reported. As a concept proof, we have also successfully demonstrated a flexible Re-RAM crossbar array device with a metal–semiconductor–insulator–metal design for sneaky path mitigation, which can store information with long retention. Aggressive downscaling to ∼14 nm lateral dimension produced an ultra-small cell effectively having 76.5 nm2 area for single bit storage. Furthermore, the devices also exhibited unique optical programmability among the low resistance states.