Vertical Conductivity and Topography in Electrostrictive Germanium Sulfide Microribbon via Conductive Atomic Force Microscopy

• Published in: Nano letters Vol. 22; no. 18; pp. 7636 - 7643
• Main Authors: Chen, Zhangfu, Hoang, Anh Tuan, Hwang, Woohyun, Seo, Dongjea, Cho, Minhyun, Kim, Young Duck, Yang, Lianqiao, Soon, Aloysius, Ahn, Jong-Hyun, Choi, Heon-Jin
• Format: Journal Article
• Language: English
• Published: American Chemical Society 28.09.2022
• Subjects: conductive atomic force microscopy; spatial correlation; GeS microribbon; vertical conductivity; heterogeneous distribution
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.2c02763

Layered group IV monochalcogenides are two-dimensional (2D) semiconducting materials with unique crystal structures and novel physical properties. Here, we report the growth of single crystalline GeS microribbons using the chemical vapor transport process. By using conductive atomic force microscopy, we demonstrated that the conductive behavior in the vertical direction was mainly affected by the Schottky barriers between GeS and both electrodes. Furthermore, we found that the topographic and current heterogeneities were significantly different with and without illumination. The topographic deformation and current enhancement were also predicted by our density functional theory (DFT)-based calculations. Their local spatial correlation between the topographic height and current was established. By virtue of 2D fast Fourier transform power spectra, we constructed the holistic spatial correlation between the topographic and current heterogeneity that indicated the diminished correlation with illumination. These findings on layered GeS microribbons provide insights into the conductive and topographic behaviors in 2D materials.