High-Conductance Pathways in Ring-Strained Disilanes by Way of Direct σ‑Si–Si to Au Coordination

A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single-molecule measurements. Conformationally locked cis diastereomers of bis­(sulfide)-anchor-equipped 1,2-disilaacenaphthenes readily form high-conducting junction...

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Published inJournal of the American Chemical Society Vol. 138; no. 36; pp. 11505 - 11508
Main Authors Kim, Nathaniel T, Li, Haixing, Venkataraman, Latha, Leighton, James L
Format Journal Article
LanguageEnglish
Published WASHINGTON American Chemical Society 14.09.2016
Amer Chemical Soc
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Summary:A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single-molecule measurements. Conformationally locked cis diastereomers of bis­(sulfide)-anchor-equipped 1,2-disilaacenaphthenes readily form high-conducting junctions in which the two sulfide anchors bind in a bipodal fashion to one gold electrode, providing enough stability for a stable electrical contact between the Si–Si σ bond and the other electrode.
Bibliography:National Science Foundation
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0002-7863
1520-5126
DOI:10.1021/jacs.6b07825