Structures and Energetics of E2H3 + (E = As, Sb, and Bi) Cations
E2H2 (E = As, Sb, Bi) structures involving multiple bonds have attracted much attention recently. The E2H3 + cations (protonated E2H2) are predicted to be viable with substantial proton affinities (>180 kcal/mol). Herein, the bonding characters and energetics of a number of E2H3 + isomers are exp...
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Published in | The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory Vol. 128; no. 3; pp. 563 - 571 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
25.01.2024
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Subjects | |
Online Access | Get full text |
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Summary: | E2H2 (E = As, Sb, Bi) structures involving multiple bonds have attracted much attention recently. The E2H3 + cations (protonated E2H2) are predicted to be viable with substantial proton affinities (>180 kcal/mol). Herein, the bonding characters and energetics of a number of E2H3 + isomers are explored through CCSD(T) and DFT methods. For the As2H3 + system, the CCSD(T)/cc-pVQZ-PP method predicts that the vinylidene-like structure lies lowest in energy, with the trans and cis isomers higher by 6.7 and 9.3 kcal/mol, respectively. However, for Sb2H3 + and Bi2H3 + systems, the trans isomer is the global minimum, while the energies of the cis and vinylidene-like structures are higher, respectively, by 2.0 and 2.4 kcal/mol for Sb2H3 + and 1.6 and 15.0 kcal/mol for Bi2H3 +. Thus, the vinyledene-like structure is the lowest energy for the arsenic system but only a transition state of the bismuth system. With permanent dipole moments, all minima may be observable in microwave experiments. Besides, we have also obtained transition states and planar-cis structures with higher energies. The current results should provide new insights into the various isomers and provide a number of predictions for future experiments. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1089-5639 1520-5215 1520-5215 |
DOI: | 10.1021/acs.jpca.3c05945 |